FCPF260N60E datasheet

Маркировка

FCPF260N60E
Производитель

Fairchild Semiconductor
Описание

Fairchild Semiconductor FCPF260N60E Configuration: Single Continuous Drain Current: 15 A Drain-source Breakdown Voltage: 650 V Fall Time: 13 ns Forward Transconductance Gfs (max / Min): 15.5 S Gate Charge Qg: 48 nC Gate-source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220F Power Dissipation: 36 W Resistance Drain-source Rds (on): 260 mOhms Rise Time: 11 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 13 ns RoHS: yes Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 260 mOhms Forward Transconductance gFS (Max / Min): 15.5 S Typical Turn-Off Delay Time: 13 ns
Количество страниц

10 шт.
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